BUX12 Datasheet, PDF (1/2 Pages) Seme LAB – NPN MULTI - EPITAXIAL POWER TRANSISTOR

NPN BUX12
HIGH CURRENT, HIGH SPEED , HIGH POWER
TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3.
They are intended for use in switching and linear appications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
V_CEX
I_C
I_CM
I_B
P_t
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
I_E = 0
I_C = 0
V_BE = -1.5V
t_p = 10ms
@ T_C = 25°
Value
250
300
7.0
300
20
25
4
150
200
-65 to +200
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V_CEO(SUS)
V_EB0(SUS)
I_CEO
I_CEX
I_EBO
Ratings
Collector-Emitter
Sustaining Voltage (1)
Emitter-Base Breakdown
Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Test Condition(s)
I_C=200 mA
I_C=0A , I_E=50 mA
V_CE=200 V , I_B=0A
V_CE= V_CEX , V_BE= -1.5V
V_CE= V_CEX , V_BE= -1.5V, T_case = 125°C
V_EB=5.0 V, I_C=0
Min Typ Mx Unit
250 - -
V
7- -
V
- - 1.5 mA
-
-
-
-
1.5
6
mA
- - 1 mA
COMSET SEMICONDUCTORS
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