BUV27_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON POWER TRANSISTORS

SEMICONDUCTORS
BUV27 – BUV27A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast
switching applications such as high frequency and efficiency converters, switching regulators
and motor control.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_t
T_j
T_stg
Collector-Base Voltage
I_E = 0
Collector-Emitter Voltage ^IB ^{= 0}
Emitter-Base Voltage
I_C = 0
Collector Current
Collector Peak Current
t_p = 10ms
Base Current
Base Current
t_p = 10ms
Power Dissipation
Junction Temperature
Storage Temperature range
Value
BUV27 BUV27A
240
300
120
150
7
7
12
20
4
6
85
85
175
-65 to 175
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Unit
V
V
V
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-mb
From junction to mounting base
Value
1.76
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
13