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| BUV27 Datasheet, PDF (1/3 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR | |||
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SEMICONDUCTORS
BUV27 â BUV27A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for
fast switching applications such as high frequency and efficiency converters,
switching regulators and motor control.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCESM
VCEO
VCEsat
ICsat
IC
ICM
IB
IBM
Collector-Emitter Voltage
Peak value ; VBE=0
Collector-Emitter Voltage
Collector-Emitter Saturation Voltage
Collector Current Saturation
Collector Current
Collector Peak Current
Base Current
Base Current
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
Value
240
300
120
150
1.5
1
8
7
15
25
4
6
Unit
V
V
V
A
A
A
A
A
Symbol
Ratings
Pt
Power Dissipation
@ Tmb < 25°
BUV27
BUV27A
Tj
Junction Temperature
BUV27
BUV27A
Ts
Storage Temperature range
BUV27
BUV27A
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
Ratings
From junction to mounting base
BUV27
BUV27A
Value
Unit
65
150
-65 to +150
Watts
°C
Value
1.92
Unit
K/W
Page 1 of 3
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