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| BUV26 Datasheet, PDF (1/3 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR | |||
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SEMICONDUCTORS
BUV26 â BUV26A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast
switching applications such as high frequency and efficiency converters, switching regulators
and motor control.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BUV26 BUV26A
VCBO
Collector-Base Voltage
IE = 0
180
200
VCEO
Collector-Emitter Voltage IB = 0
90
100
VEBO
Emitter-Base Voltage
IC = 0
7
5
IC
Collector Current
14
ICM
Collector Peak Current
tp = 10ms
25
IB
Base Current
4
IBM
Base Current
tp = 10ms
6
Pt
Power Dissipation
85
65
Tj
Junction Temperature
150
Tstg
Storage Temperature range
-65 to 150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Unit
V
V
V
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-mb From junction to mounting base
BUV26
BUV26A
Value
1.76
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
1|3
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