BUV23_12 Datasheet, PDF (1/2 Pages) Comset Semiconductor – POWER SWITCH APPLICATIONS

NPN BUV23
POWER SWITCH APPLICATIONS
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are intended for use in power switching appications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
V_CEX
V_CER
I_C
I_CM
I_B
P_t
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
R_thJC
Ratings
Thermal Resistance, Junction to Case
I_B = 0
I_E = 0
I_C = 0
V_BE = -1.5V
R_BE <= 100 Ω
t_p = 10ms
@ T_C = 25°
Value
325
400
7.0
400
390
30
40
6
250
200
-65 to +200
Unit
V
V
V
V
V
A
A
A
Watts
°C
°C
Value
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V_CEO(SUS)
V_EB0(SUS)
I_CEO
I_CEX
Ratings
Collector-Emitter
Sustaining Voltage (1)
Emitter-BaseBreakdown
Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Test Condition(s)
I_C=200 mA, L= 25mH
I_C=0A , I_E=50 mA
V_CE=260 V , I_B=0A
V_CE= V_CEX , V_BE= -1.5V
V_CE= V_CEX , V_BE= -1.5V, T_case = 125°C
COMSET SEMICONDUCTORS
Min Typ Mx Unit
325 - -
V
7- -
V
- - 3 mA
-
-
-
-
3
12
mA
1/2