BUR52_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH CURRENT NPN SILICON TRANSISTORS

BUR52
HIGH CURRENT NPN SILICON TRANSISTORS
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal
case,
Intented for use in switching and linear applications in military and industrial equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_B
P_T
T_J
T_S
Collector-Emitter Voltage (I_B = 0)
Collector-Base Voltage (I_E = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_C
I_CM t_p = (10 ms)
@ T_C = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
250
350
10
60
80
16
350
200
-55 to +200
Unit
V
V
V
A
A
W
°C
Value
0.5
Unit
°C/W
COMSET SEMICONDUCTORS
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