BU911 Datasheet, PDF (1/2 Pages) STMicroelectronics – MEDIUM VOLTAGE NPN IGNITION DARLINGTON

NPN BU911
HIGH VOLTAGE POWER DARLINGTON
The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220
plastic package.
They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid
drivers, etc.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CES
V_EBO
I_C
I_B
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage (V_BE=0)
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R_thJ-c
Ratings
Thermal Resistance, Junction to case
I_C
I_CM
@ T_C = 25°
Value
400
450
5
6
10
1
60
150
-65 to +150
Unit
V
V
V
A
A
A
Watts
°C
°C
Value
70
Unit
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I_CEO
I_CES
I_EBO
V_CEO(sus)
Ratings
Test Condition(s)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector- Emitter sustaining
Voltage (1)
V_CE=400 V, I_B=0V
V_CE=450 V, V_BE=0
V_CE=450 V, V_BE=0, T_C=125°C
V_BE=5.0 V, I_C=0
I_C=100 mA
Min Typ Mx Unit
- - 1 mA
-
-
-
-
1
5
mA
- - 5 mA
400 - -
V
COMSET SEMICONDUCTORS
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