BU806 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

SEMICONDUCTORS
BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in
a TO-220 plastic package.
They are high voltage, high current devices for fast switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
V_CBO
V_CEV
V_CEO
V_EBO
I_C
I_CM
I_B
P_T
t_J
t_s
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation at Case Temperature
Junction Temperature
Storage Temperature range
400
400
200
6
8
15
2
T_mb < 25°C
60
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
2.08
70
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
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