BFX89_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – WIDE BAND VHF/UHF AMPLIFIER

BFX89 – BFY90
WIDE BAND VHF/UHF AMPLIFIER
DESCRIPTION :
• SILICON PLANAR EPITAXIAL
TRANSISTORS
• TO-72 METAL CASE
• VERY LOW NOISE
APPLICATIONS :
• TELECOMMUNICATIONS
• WIDE BAND UHF AMPLIFIER
• RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
interdigitated base emitter geometry. They are particulary designed for use in wide band
common-emitter linear amplifiers up to 1 GHz. They feature very high f_T, low reverse
capacitance, excellent cross modulation properties and very low noise performance. The
BFY90 is complementary to the BFR99A. Typical applications include telecommunication
and radio communication equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_CM
Ptot
Tstg, Tj
Collector-Emitter Voltage ( IB = 0)
Collector-Emitter Voltage ( RBE ≤50Ω )
Collector-Base Voltage ( IE= 0)
Collector-Base Voltage ( IC = 0)
Collector Current
Collector Peak Current
Total Power Dissipation at Tamb ≤ 25 °C
Storage and Junction Temperature
Value
15
30
30
2.5
25
50
200
-65 to 200
Unit
V
V
V
V
mA
mA
mW
°C
25/10/2012
COMSET SEMICONDUCTORS
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