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BFX89 Datasheet, PDF (1/4 Pages) STMicroelectronics – WIDE BAND VHF/UHF AMPLIFIER
BFX89
BFY90
WIDE BAND VHF/UHF AMPLIFIER
• SILICON PLANAR EPITAXIAL TRANSISTORS
• TO-72 METAL CASE
• VERY LOW NOISE
APPLICATIONS :
• TELECOMMUNICATIONS
• WIDE BAND UHF AMPLIFIER
• RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
interdigitated base emitter geometry. They are particulary designed for use in wide
band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low
reverse capacitance, excellent cross modulation properties and very low noise
performance. The BFY90 is complementary to the BFR99A. Typical applications
include telecommunication and radio communication equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCER
VCBO
VEBO
IC
ICM
Ptot
Tstg, Tj
Ratings
Collector-Emitter Voltage ( IB = 0)
Collector-Emitter Voltage ( RBE ≤50Ω )
Collector-Base Voltage ( IE= 0)
Collector-Base Voltage ( IC = 0)
Collector Current
Collector Peak Current
Total Power Dissipation at Tamb ≤ 25 °C
Storage and Junction Temperature
Value
15
30
30
2.5
25
50
200
-65 to 200
Unit
V
V
V
V
mA
mA
mW
°C
COMSET SEMICONDUCTORS
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