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BFW16A Datasheet, PDF (1/3 Pages) STMicroelectronics – CATV-MATV AMPLIFIERS | |||
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NPN BFW16A
HF WIDEBAND TRANSISTORS
The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector
connected to the case. The transistor has extremely good intermodulation properties and a high
power gain.It is a ruggedized version of the BFW16, which it succeds.
It is primarily intended for :
â¢Final and driver stages of channel and band aerial amplifiers with high outpout power for
bands I , II , III , IV , V (40-860 MHz).
â¢Final stage of the wideband vertical amplifier in high speed oscilloscopes.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBOM
VEBO
VCERM
IC
ICM
Pt
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
(open emitter ; peak value)
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
IC = 0
RBE<=50â¦
@ TC = 125°
Value
25
40
2
40
150
300
1.5
200
-65 to +200
Unit
V
V
V
V
mA
mA
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJa
RthJmb
RthJmb-h
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
Thermal Resistance, Junction to Mounting Base to heatsink
Value
250
50
1.2
Unit
K/W
K/W
K/W
09/11/2012
COMSET SEMICONDUCTORS
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