BDY53_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON TRANSISTORS, DIFFUSED MESA

NPN BDY53 – BDY54
SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_B
P_TOT
T_J
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
@ T_C = 25°
T_S
Storage Temperature
BDY53
BDY54
BDY53
BDY54
Value
60
120
100
180
7
12
5
60
Unit
V
V
V
A
A
W
-65 to +200
°C
08/11/2012
COMSET SEMICONDUCTORS
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