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| BDW84C Datasheet, PDF (1/2 Pages) Comset Semiconductor – PNP SILICON DARLINGTONS POWER TRANSISTORS | |||
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PNP BDW84C
PNP SILICON DARLINGTONS POWER
TRANSISTORS
The BDW84C is silicon epitaxial-base PNPpower monolithic Darlington transistor mounted in Jedec
TO-218 plastic package.
It is intended for use in power linear and switching applications.
The complementary is BDW83C.
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCEO
-VCBO
-VEBO
-IC
-ICM
-IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
-IB = 0
-IE = 0
-IC = 0
tp = 10ms
@ TC = 40°
Value
100
100
5
15
40
0.5
130
150
-65 to +150
Unit
V
V
V
A
A
A
Watts
°C
°C
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
0.96
Unit
°C/W
Symbol
-VCEO(SUS)
-ICEO
-ICBO
-IEBO
Ratings
Collector-Emitter
Sustaining Voltage (1)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Test Condition(s)
-IC=30 mA
-VCE=40 V , -IB=0
-VCE= 100V , -IE= 0
-VCE= 100 V , -IE= 0, Tcase = 150°C
-VEB=5.0 V, -IC=0
hFE
-VCE(SAT)
-VBE(on)
-Vf
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter Voltage (1)
Diode Forward Voltage (1)
-IC=6 A , -VCE=3.0 V
-IC=15 A , -VCE=3.0 V
-IC=6 A , -IB=12 mA
-IC=15 A , -IB=150 mA
-IC=6 A , -IB=3 A
-IF = 10A
Min Typ Mx Unit
100 - -
V
- - 1 mA
-
-
-
-
0.5
5
mA
- - 2 mA
750
100
- 20 K
--
-
- - 2.5
- -4 V
- - 2.5
- -4 V
COMSET SEMICONDUCTORS
1/2
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