BD909 Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

SEMICONDUCTORS
BD909 – BD911
SILICON POWER TRANSISTORS
The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220
envelope. They are intended for use in power linear and switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BD909
BD911
V_CBO
Collector-Base Voltage
I_E = 0
80
100
V_CEO
Collector-Emitter Voltage
I_B = 0
80
100
V_EBO
Emitter-Base Voltage
I_C = 0
5
I_C
Collector Current
15
I_E
Emitter Current
15
I_B
Base Current
5
P_t
Power Dissipation
90
T_j
Junction Temperature
150
T_stg
Storage Temperature range
-65 to 150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-mb From junction to mounting base
Value
1.4
Unit
V
V
V
A
A
A
W
°C
Unit
°C/W
25/09/2012
COMSET SEMICONDUCTORS
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