BD896 Datasheet, PDF (1/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,
and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
I_B
Base Current
P_T
Power Dissipation
T_J
Junction Temperature
T_s
Storage Temperature range
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
T_c = 25°
T_a = 25°
Value
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-300
70
2
150
-65 to +150
Unit
V
V
V
A
mA
Watts
°C
25/09/2012
COMSET SEMICONDUCTORS
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