BD684TO3_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON DARLINGTON POWER TRANSISTORS

PNP BD684 TO3 (Temporary part number)
SILICON DARLINGTON POWER TRANSISTORS
PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video
applications.
They are mounted in Jedec TO-3 metal package.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_BM
P_T
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
I_C
I_CM
@ T_mb = 25°C
Value
-140
-140
-5
-4
-6
-0.1
65
150
-65 to +150
Symbol
Ratings
R_thJ-mb
R_thJ-a
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
V
V
V
A
A
W-
°C
°C
Unit
K/W
K/W
Temporary datasheet
23/10/2012
COMSET SEMICONDUCTORS
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