BD684A Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON DARLINGTON POWER TRANSISTORS

PNP BD684 – BD684A
SILICON DARLINGTON POWER TRANSISTORS
The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for
audio and video applications.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD683 and BD683A.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_BM
P_T
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
I_C
I_CM
Base current peak value
Total power Dissipation
@ T_mb = 25°C
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-mb
R_thJ-a
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
-120
-120
-5
-4
-6
-0.1
40
150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
Value
3.12
100
Unit
K/W
K/W
23/10/2012
COMSET SEMICONDUCTORS
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