BD434 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PNP SILICON EPIBASE TRANSISTORS

BD434 – BD436 – BD438
SILICON PNP POWER TRANSISTORS.
The BD434-BD436-BD438 are PNP Transistors mounted in Jedec TO-126 plastic package.
They are recommended for use in medium power linear and switching applications.
NPN complements are BD433-BD435-BD437.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage (I_E= 0)
V_CEO
V_EBO
I_C
I_CM
I_B
P_C
T_J
T_Stg
Collector-Emitter Voltage (I_B= 0)
Emitter-Base Voltage (I_c= 0)
Collector Current
Collector Current Peak
Base Current
Total power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
BD434
-22
BD436
-32
V
BD438
-45
BD434
-22
BD436
-32
V
BD438
-45
-5
V
-4
-7
A
-1
A
T_C = 25°C
36
W
150
°C
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
R_thJ-c
R_thJ-a
Ratings
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
3.5
100
Unit
°C/W
°C/W
25/09/2012
COMSET SEMICONDUCTORS
1|3
27/08/2012