BD410 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

SEMICONDUCTORS
BD410
NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package.
AF-amplifier for high supply voltage
They are intended for control circuit, vertical output stages in TVsets, and general purpose
applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_T
t_J
t_s
t_L
Collector-Base Voltage
500
Collector-Emitter Voltage
325
Emitter-Base Voltage
5
Collector Current
1
Collector Peak Current
Total Power Dissipation
Junction Temperature
T_a =25°C
T_c =25°C
1.5
1.25
20
-55 to +125
Storage Temperature range
-55 to +125
Lead Temperature 1.6 mm From Case For 10 Secondes
260
Unit
V
V
V
A
A
W
°C
25/09/2012
COMSET SEMICONDUCTORS
1/3
05/11/2012