BD246 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

BD246, A, B, C
PNP SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
The BD246 series are PNP power transistors in a TO3PN envelope.
They are the power transistors for power amplifier and high-speed-switching applications.
The complementary is BD245, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage (I_C = -30mA)
V_CER
V_EBO
I_C
I_B
P_T
T_J
T_S
Collector-Emitter Voltage (R_BE = 100 Ω)
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
I_C
I_CM
T_mb = 25° C
Value
-45
-60
-80
-100
-55
-70
-90
-115
-5.0
-10
-15
-3
80
-65 to +150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
R_thJC
R_thJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
1.56
42
Unit
°C / W
°C / W
25/09/2012
COMSET SEMICONDUCTORS
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