BD245 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

BD245 – A – B – C
NPN SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
They are the power transistors for power amplifier and high-speed-switching applications.
The complementary is BD246, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage (I_C = -30mA)
V_CER
V_EBO
I_C
I_B
P_T
T_J
T_S
Collector-Emitter Voltage (R_BE = 100 Ω)
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
T_mb = 25° C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
BD245
BD245A
BD245B
BD245C
BD245
BD245A
BD245B
BD245C
I_C
I_CM
45
60
80
100
55
70
90
115
5.0
10
15
3
80
-65 to +150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
Value
1.56
42
Unit
°C / W
°C / W
22/10/2012
COMSET SEMICONDUCTORS
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