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BD241 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40W)
NPN BD241 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD242, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VEBO
IC
IB
PT
TJ
TS
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 100 Ω)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
Value
45
60
80
100
55
70
90
115
5.0
3
5
1
2
40
150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
62.5
3.13
Unit
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
23/10/2012
COMSET SEMICONDUCTORS
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