BD240 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

PNP BD240 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The NPN complements are BD239, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage
V_CER
Collector-Emitter Voltage (R_BE = 100 Ω)
V_CBO
Collector-Base Voltage
V_EBO
I_C
I_B
P_T
T_J
T_S
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_C
I_CM
@ T_amb = 25° C
@ T_case = 25° C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-amb
R_thJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
BD240
BD240A
BD240B
BD240C
BD240
BD240A
BD240B
BD240C
BD240
BD240A
BD240B
BD240C
Value
-45
-60
-80
-100
-55
-70
-90
-115
-45
-60
80
-100
-5.0
-3
-7
0.5
30
30
150
-65 to +150
Value
70
4.17
Unit
V
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
22/10/2012
COMSET SEMICONDUCTORS
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