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| BD142_12 Datasheet, PDF (1/2 Pages) Comset Semiconductor – NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS | |||
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BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PT
TJ
TS
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Ratings
THERMAL CHARACTERISTICS
VBE=-1.5 V
@ TC = 25°
Value
45
50
7
50
15
7
117
-65 to +200
Unit
V
V
V
V
A
A
Watts
°C
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0
45
V
VCEX(BR) Collector-Emitter Breakdown Voltage (*) IC=100 mA, VBE=-1.5 V 50
V
VCE(SAT)
Collector-Emitter Saturation Voltage (*) IC=4 A, IB=0.4 A
-
-
1.1 V
ICEX
Collector-Emitter Cutoff Current
VCE= 40 V, VBE=-1.5 V
-
-
2 mA
IEBO
Emitter-Base Cutoff Current
VEB=7 V
-
-
1 mA
VBE
Base-Emitter Voltage (*)
IC=4.0 A, VCE=4.0V
-
-
1.5 V
IS/B
Second Breakdown collector current
t=1s, VCE=39 V
3
-
-
A
hFE
Static Forward Current Transfer Ratio (*)
VCE=4.0 V, IC=4.0 A
VCE=4.0 V, IC=0.5 A
12.5
20
-
-
160
-
-
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
18/10/2012
COMSET SEMICONDUCTORS
1/2
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