BD135 Datasheet, PDF (1/3 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage (I_E= 0)
V_CEO
Collector-Emitter Voltage (I_B= 0)
V_CER
V_EBO
I_C
I_B
P_T
T_J
T_Stg
Collector-Emitter Voltage (R_BE= 1 kΩ)
Emitter-Base Voltage (I_C= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
I_C
I_CM
I_B
T_mb = 70°C
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-c
R_thJ-a
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
10
100
Unit
°C/W
°C/W
25/09/2012
COMSET SEMICONDUCTORS
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27/08/201225/09/2012