BD132 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP power transistor

PNP BD132
NPN BD131
SILICON PLANAR EPITAXIAL POWER
TRANSISTORS
The BD132are PNN transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
NPN complements are BD131 .
ABSOLUTE MAXIMUM RATINGS
Symbol
-V_CEO
-V_CBO
-V_EBO
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Value
45
45
4
Unit
V
V
V
Symbol
I_C
I_B
P_T
Ratings
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
-I_C
-I_CM
-I_BM
+I_BM
@ T_mb = 60°C
Value
3
6
0.5
0.5
15
Unit
A
A
Watts
T_J
Junction Temperature
T_Stg
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
R_thJ-mb
Ratings
Thermal Resistance, Junction to mouting base
150
°C
-65 to +150 °C
Value
6
Unit
K/W
COMSET SEMICONDUCTORS
1