BD131_12 Datasheet, PDF (1/2 Pages) Comset Semiconductor – SILICON PLANAR EPITAXIAL POWER TRANSISTORS

NPN BD131
SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD131are NPN transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
PNP complements are BD132
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_B
P_T
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Value
I_C
I_CM
I_BM
I_BM
@ T_mb = 60°C
45
45
4
3
6
0.5
0.5
15
150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
Ratings
R_thJ-mb Thermal Resistance, Junction to mouting base
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I_CBO
I_EBO
V_CE(SAT)
V_BE(SAT)
h_FE
Collector cut-off current
I_E=0 , V_CB=40 V
I_E=0 , V_CB=40 V ,T_j= 150°C
Emitter cut-offcurrent
I_C=0, V_EB=3 V
Collector-Emitter saturation I_C=0.5 A, I_B=50 mA
Voltage
I_C=2.0 A, I_B=200 mA
Base-Emitter saturation I_C=0.5 A, I_B=50 mA
Voltage
I_C=2.0 A, I_B=200 mA
DC Current Gain
V_CE=12 V, I_C=500m A
V_CE=1 V, I_C=2 A
Value
6
Unit
K/W
Min Typ Max Unit
-
-
-
-
5
500
µA
-
-
5 µA
-
-
-
-
0.3
1.2
V
-
-
-
-
0.7
1,5
V
40 -
-
20 -
-
18/10/2012
COMSET SEMICONDUCTORS
1|2