BCY58_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – SILICON PLANAR EPITAXIAL TRANSISTORS

NPN BCY58 – BCY59
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CES
V_EBO
I_C
I_B
P_D
P_D
T_J
T_Stg
Collector-Emitter Voltage(1)
Collector-Emitter Voltage (V_BE =0)
Emitter-Base Voltage
Collector Current
Base Current
Total Power
Dissipation
Total Power
Dissipation
@ T_amb = 45°
@ T_case= 45°
Junction Temperature
Storage Temperature range
(1) Applicable up to I_C = 500mA
THERMAL CHARACTERISTICS
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Symbol
Ratings
R_thJ-a
R_thJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
45
32
45
32
7
7
200
50
0.39
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
Watts
°C
°C
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
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