APT6030BN Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SEMICONDUCTORS
APT6030BN
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE
POWER MOSFETS TRANSISTORS
FEATURE
N channel in a plastic TO-3PML package.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DS
I_DS
I_DM
V_GS
R_DS(on)
P_T
t_J
t_stg
Drain-Source Voltage
Continuous Drain Current T_C= 37°C
Pulsed Drain Current T_C= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Total Power Dissipation @ T_C= 25°C
Linear Derating Factor
Operating Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
600
23
92
30
0.30
360
2.9
-55 to +150
-55 to +150
Unit
V
A
V
Ω
W
W/°C
°C
Value
0.34
40
Unit
°C/W
22/10/2012
COMSET SEMICONDUCTORS
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