2N6055 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

2N6053 PNP
2N6055 NPN
COMPLEMENTARY POWER DARLINGTON
The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration
and are mounted in Jedec TO-3 metal case.
They are intended for use in power linear and switching applications.
The complementary NPN type is the 2N6055
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_TOT
T_J
T_S
Ratings
#Collector-Emitter Voltage
I_B=0
Collector-Base Voltage
I_E=0
Emitter-Base Voltage
Collector Current
Continuous
Peak
Base Current
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
Total Dissipation
Junction Temperature
Storage Temperature
@ T_C = 25°
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
Value
60
60
5.0
8.0
16
120
Unit
V
V
V
A
mA
100
Watts
200
°C
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol
R_thJC
Ratings
Thermal Resistance, Junction to Case
2N6053 PNP
2N6053
2N6055
COMSET SEMICONDUCTORS
Value
1.75
Unit
°C/W
1/3