2N6053_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – POWER COMPLEMENTARY SILICON TRANSISTORS

PNP 2N6053
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted
in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary NPN types are 2N6055.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_T
T_J
T_s
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction
Storage Temperature
I_E=0
I_B=0
I_C=0
@ T_C < 25°
Value
2N6053
2N6053
-60
-60
-5.0
-8
-16
-120
100
200
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1.17
Unit
V
V
V
A
A
mA
W
°C
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
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