2N6050_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – POWER COMPLEMENTARY SILICON TRANSISTORS

PNP 2N6050 – 2N6051 – 2N6052
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage
I_E=0
V_CEO
Collector-EmitterVoltage
I_B=0
V_CEX
V_EBO
I_C
I_CM
I_B
P_T
T_J
T_s
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V_BE= 1.5 V
I_C=0
@ T_C < 25°
Value
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
-60
-80
-100
-60
-80
-100
-60
-80
-100
-5.0
-12
-20
-200
150
200
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1.17
Unit
V
V
V
V
A
A
mA
W
°C
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
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