2N5671_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – HIGH CURRENT FAST SWITCHING APPLICATIONS

NPN 2N5671 – 2N5672
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.
They are especially intended for high current, fast switching industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
V_CEX
V_CER
I_C
I_B
P_D
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Collector Current
V_EB = -1.5V
R_EB = 50 Ω
R_EB <= 50 Ω
Base Current
Total Device Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
Value
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
90
120
120
150
7.0
120
150
110
140
30
10
140
200
-65 to +200
Unit
V
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
09/11/2012
COMSET SEMICONDUCTORS
Value
1.25
Unit
°C/W
1|4