2N5671 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,140W)

NPN 2N5671 – 2N5672
HIGH CURRENT FAST SWITCHING APPLICATIONS
The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.
They are especially intended for high current, fast switching industrial applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
V_CEX
V_CER
I_C
I_B
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
V_EB = -1.5V, R_EB = 50 Ω
Collector-Emitter Voltage
R_EB <= 50 Ω
Collector Current
Base Current
Total Device Dissipation
Junction Temperature
@ T_C = 25°
Storage Temperature
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
2N5671
2N5672
Value
90
120
120
150
7.0
120
150
110
140
30
10
140
Unit
V
V
V
V
V
A
A
Watts
200
°C
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol
R_thJC
Ratings
Thermal Resistance, Junction to Case
2N5671
2N5672
Value
1.25
Unit
°C/W
COMSET SEMICONDUCTORS
1/3