2N3773 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,140V,150W)

NPN 2N3773
HIGH POWER TRANSISTOR
The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case.
They are intended for linear amplifiers and inductive switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
V_CEX
I_C
I_CM
I_B
I_BM
P_t
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
I_B = 0
I_E = 0
I_C = 0
V_BE = -1.5V
@ T_C = 25°
Value
140
160
7
160
16
30
4
15
150
150
-65 to +200
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
V_CEO(SUS)
I_CEO
Ratings
Collector-Emitter Sustaining
Voltage (*)
Collector Cutoff Current
I_CEX
Collector Cutoff Current
I_EBO
h_FE
V_CE(SAT)
V_BE
I_S/B
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Second breakdown collector
current
Test Condition(s)
I_C= 200 mA, I_B = 0
V_CE= 140 V, I_B= 0
V_CE= 140 V, V_BE= -1.5V
V_CE= 140 V_, V_BE= -1.5V
T_case = 150°C
V_EB= 7 V, I_C= 0
I_C= 8 A, V_CE= 4 V
I_C= 16 A, V_CE= 4 V
I_C= 8 A, I_B= 800 mA
I_C= 16 A, I_B= 3.2 A
I_C= 8 A, V_CE= 4 V
V_CE= 100 V, t_s = 1s
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
Min Typ Max Unit
140 -
-
V
-
-
2 mA
-
-
2
mA
-
- 10
-
-
5 mA
15
5
-
-
60
-
-
-
-
-
-
1.4
4
V
-
- 2.2 V
1.5 -
-
A
21/09/2012
COMSET SEMICONDUCTORS
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