2N3636 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO39

PNP 2N3636 – 2N3637
SILICON PLANAR RF TRANSISTORS
The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.
They are intended for high voltage switching and Low Power Amplifier.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage (I_b = 0)
V_CBO
Collector-Base Voltage (I_e = 0)
V_EBO
Emitter-Base Voltage (I_c = 0)
I_C
Collector Current
P_D
Total Power Dissipation
T_J
T_Stg
T_amb
Junction Temperature
Storage Temperature Range
Operating Ambient Temperature
T_amb = 25°C
T_case = 25°C
Value
-175
-175
-5
-1
1
5
200
-65 to +200
-65 to +150
Unit
V
V
V
A
W
°C
°C
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
I_CBO
Collector Cutoff
Current
Test Condition(s)
V_CB = -100 V, I_E =0
I_EBO
Emitter Cutoff Current V_EB = -3 V, I_C =0
V_CEO
V_CBO
V_EBO
Collector Emitter
Breakdown Voltage (*)
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
I_C = -10 mA, I_B =0
I_C = -100 µA, I_E =0
I_E = -10 mA, I_C =0
21/09/2012
COMSET SEMICONDUCTORS
Min Typ Max Unit
-
- -100 nA
-
- -50 nA
-175 -
-
V
-175 -
-
V
-5
-
-
V
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