2N3583_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – NPN SILICON POWER TRANSISTORS.

NPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case.
They are designed for high-speed switching and linear amplifier application for high-voltage
operational amplifiers, switching regulators, converters,deflection stages and high fidelity
amplifiers.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage (I_E= 0)
V_CEO
V_EBO
I_C
I_CM
I_B
P_T
T_J
T_Stg
Collector-Emitter Voltage (I_B= 0)
Emitter-Base Voltage (I_C= 0)
Collector Current
Peak Collector
Current
t_p = 10ms
Base current
Total power
Dissipation
@ T_mb = 70°C
Junction Temperature
Storage Temperature
Value
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
250
330
440
175
250
300
6
1
2
2
5
1
35
200
-65 to +200
Unit
V
V
V
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to ambient in free air
Value
5
87.5
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
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