2N3442_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH POWER INDUSTRIAL TRANSISTORS

NPN 2N3442 – 2N4347
HIGH POWER INDUSTRIAL TRANSISTORS
NPN silicon transistors in Jedec TO-39 metal case.
They are designed for applictions in industrial and commercial equipment including high fidelity
audio amplifiers, series and shunts regulators and power switches.
Low Collector-Emitter Saturation Voltage.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
V_CEO
V_CB
Collector-Emitter
Voltage
Collector-Base Voltage
V_EB
Emitter-Base Voltage
Continuous
I_C
Collector Current
Peak
I_B
Base Current
Continuous
Peak
P_D
Total Device
Dissipation
@ T_C = 25°
Derate above 25°
T_J
Junction Temperature
T_S
Storage Temperature
(**) This data guaranteed in addition to JEDEC registered data.
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
120
140
140
160
7
5
10
10
15 (**)
3
7
8
-
100
117
0.57
0.67
-65 to +200
Unit
V
V
V
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
2N4347
2N3442
Value
1.75
1.5
Unit
°C/W
1