2N3441 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,140V,25W)

NPN 2N3441
SILICON POWER TRANSISTOR
The 2N3441 are NPN transistors mounted in TO-66 metal package with the collector
connected to the case .
They are intended for use in general purpose switching and amplifier applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_t
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
I_E = 0
I_C = 0
@ T_C = 25°
Value
140
160
7
3
2
25
200
-65 to +200
Unit
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V_CEO(SUS)
Collector-Emitter Sustaining
Voltage (*)
I_C= 100 mA , I_B= 0 A
I_CEO
I_CEX
I_EBO
V_CE(SAT)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (*)
V_CE= 140 V , I_B= 0
V_CE= 140 V , V_BE= 1.5 V
V_CE= 140 V , V_BE= 1.5 V
T_case = 150°C
V_EB= 7 V, I_C= 0 A
I_C= 2.7 A , I_B= 900 mA
V_BE(on)
h_FE
Base-Emitter on Voltage (*)
DC Current Gain
I_C= 40 A , I_B= 4 A
I_C= 500 mA, V_CE= 4 V
I_C= 2.7 A, V_CE= 4 V
(*) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
Min
140
-
-
-
-
-
-
25
5
Typ Max Unit
-
-
V
- 10 mA
-
5
-
6 ^mA
-
1 mA
-
6
V
- 6.5 V
-
-
100
-
-
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20/09/2012
COMSET SEMICONDUCTORS