2N3439 Datasheet, PDF (1/3 Pages) STMicroelectronics – SILICON NPN TRANSISTORS

NPN 2N3439 – 2N3440
HIGH VOLTAGE TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors
mounted in TO-39 metal package.
They are intended for use in power amplifier, in consumer and
B
industrial line-operated applications.
These devices are particularity suited as drives in high voltage low
current inverters, switching and series regulators.
E
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_J
T_Stg
Collector-Emitter
Voltage
I_B = 0
Collector-Base Voltage I_E = 0
Emitter-Base Voltage
Collector Current
I_C = 0
Base Current
Total Power Dissipation
T_amb = 25°
T_case = 25°
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Value
2N3439
2N3440
350
250
450
300
7
1
500
1
10
200
-65 to +200
Symbol
Ratings
R_thJ-a
R_thJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
35
Unit
V
V
V
A
mA
W
°C
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
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