2N3227 Datasheet, PDF (1/2 Pages) Comset Semiconductor – SILICON ANNULAR TRANSISTORS

NPN 2N3227
SILICON ANNULAR TRANSISTORS
The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed
switching applications.
They are mounted in Jedec TO-18 metal.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CEO
V_EBO
V_CES
I_{C (peak)}
P_D
P_D
T_J
T_Stg
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Value
40
20
6
40
Collector Current
TOTAL Device Dissipation Ambient Temperature @ T_C =
Derating Factore Above
25°
TOTAL Device Dissipation Case Temperature . @ T_C =
Derating Factore Above
25°
Junction Temperature
Storage Temperature range
500
0.36
2.06
1.2
6.85
+200
-65 to +200
Unit
V
V
V
V
mA
Watts
mW/°C
Watts
mW/°C
°C
NPN 2N3227
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I_CBO
I_CEX
I_BL
BV_CBO
BV_EBO
BV_CEO
BV_CES
Collector cut-off current
Collector cut-off curren
I_E = 0 ; V_CB = 20V
I_E = 0 ; V_CB = 20V ; T_A = 150°C
V_CE = 20V ; V_EB(off) = 3V
Base cut-off curren
Collector-Base Breakdown
voltage
V_CE = 20V ; V_EB(off) = 3V
I_C =10 µA ; I_B = 0
Emitter-Base Breakdown
voltage
I_E =10 µA ; I_C = 0
Collector-Emitter Breakdown
voltage (1)
I_C = 10 mA
Collector-Emitter voltage
I_C =10 µA ; I_B = 0
Min Typ Mx Unit
-
- 0.2
-
- 50
-
-
0.2 ^µA
-
- 0.5
40 -
-
V
6
-
-
V
20 -
-
V
40 -
-
V
COMSET SEMICONDUCTORS
1/2