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2N3108 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO39
NPN 2N3108 – 2N3110
GENERAL PURPOSE AMPLIFIERS
AND SWITCHES
The 2N3108 and 2N3110 are NPN transistors mounted in
TO-39 metal package.
They are intended for large signal, low noise industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
C
B
E
Symbol
Ratings
VCEO
VCBO
VEBO
IC
PD
TJ
TStg
Collector-Emitter
Voltage
IB =0
Collector-Base Voltage IE =0
Emitter-Base Voltage IC =0
Collector Current
Total Power Dissipation
Tamb = 25°
Tcase = 25°
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Value
2N3108
2N3110
60
40
100
80
5
1
0.8
5
-65 to +150
-65 to +150
Unit
V
V
V
A
W
°C
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
219
35
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3