2N3055_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – NPN SILICON DARLINGTONS

2N3055
NPN SILICON DARLINGTONS
The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
Designed for general purpose, moderate speed, switching and amplifier applications
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
VCER
V_EBO
V_CB
V_EB
I_C
I_B
P_D
T_J
T_S
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
@ T_C = 25°
Derate above 25°
Storage Temperature
Value
100
60
70
7
100
7
15
7
115
0.657
200
-65 to +200
Unit
V
V
V
V
V
V
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
31/10/2012
COMSET SEMICONDUCTORS
Value
1.52
Unit
°C/W
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