2N3054 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON POWER TRANSISTOR

NPN 2N3054
SILICON POWER TRANSISTORS
The 2N3054 are NPN transistors mounted in TO-66 metal package with the collector
connected to the case .
They Designed for general purpose switching and amplifier applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage (I_B = 0)
Collector-Base Voltage (I_E = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T_case= 25°
Value
55
90
7
4
10
2
25
200
-65 to +200
Unit
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-c
Thermal Resistance, Junction-case
Value
7
Unit
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I_CEO
I_EBO
Ratings
Collector Cut-Off Current
Emitter Cut-Off Current
I_CEV
Collector Cut-Off Current
V_CEO (*)
Collector Emitter Breakdown
Voltage
h_FE (*)
DC Current Gain
V_CE(SAT) (*)
V_BE
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
f_T
Transition Frequency
(*) Pulse conditions : tp < 300 µs, δ =2%.
Test Condition(s)
Min
V_CE= 30 V, I_B= 0
-
V_EB = 7V, I_C = 0
-
V_CE = 90V T_C = 25°C
-
V_BE = 1.5V T_C = 150°C -
I_C=0.1 mA, I_B=0
55
I_C= 100 mA, V_CE= 10 V 40
I_C= 1 A, V_CE= 2 V
8
I_C= 500 mA, I_B= 50 mA
-
I_C= 3 A, I_B= 1 A
-
I_C= 500 mA, V_CE= 4 V
-
I_C= 200 mA, V_CE=10 V
f= 1 MHz
500
Typ Max Unit
- 0.5
-
-
1
1
mA
-
6
-
-
V
-
-
-
80
-
-
-
1
6
V
- 1.7 V
-
- MHz
COMSET SEMICONDUCTORS
1/2