2N3019 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium power transistor

NPN 2N3019 – 2N3020
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .
They are intended for high-current, high-frequency amplifier applications.
They feature high gain and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
@ T_amb = 25°
@ T_case= 25°
Storage Temperature range
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
Value
80
Unit
V
140
V
7
V
1
A
0.8
Watts
5
200
°C
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol
R_thJ-a
R_thJ-c
Ratings
Thermal Resistance, Junction to ambient in
free air
Thermal Resistance, Junction to case
2N3019
2N3020
2N3019
2N3020
Value
35
219
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3