2N2905_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON PLANAR EPITAXIAL TRANSISTOR

PNP 2N2905 – 2N2905A
SILICON PLANAR EPITAXIAL TRANSISTOR
The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case .
They are intended for high speed switching and general purpose applications.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_J
T_Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_amb = 25°
Total Power Dissipation @ T_case= 25°
Junction Temperature
Storage Temperature range
Value
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
-60
-40
-60
-60
-5
-5
-600
0.6
3
200
-65 to +200
Unit
V
V
V
mA
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-a
R_thJ-c
Thermal Resistance, Junction to ambient in free 2N2905A
air
2N2905
Thermal Resistance, Junction to case
2N2905A
2N2905
Value
58.3
292
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3