2N2894_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH-SPEED SATURATED SWITCHES

NPN 2N2894
HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
They are intended for high speed, low saturation switching applications up to 100 mA.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_CES
V_EBO
I_C
P_D
T_J
T_Stg
Collector-Emitter Voltage (I_B = 0)
Collector-Base Voltage (I_E = 0)
Collector-Emitter Voltage(V_BE = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
@ T_amb = 25°
Total Power Dissipation
@ T_case= 25°
@ T_case<100°
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-a
R_thJ-c
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
-12
-12
-12
-4
-200
0.36
1.2
1
-65 to +200
-65 to +200
Unit
V
V
V
V
mA
W
°C
°C
Value
486
146
Unit
°C/ W
°C/ W
COMSET SEMICONDUCTORS
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