2N2894 Datasheet, PDF (1/2 Pages) Motorola, Inc – CASE 22-03, STYLE 1 TO-18(TO-206AA)

NPN 2N2894
HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
They are intended for high speed, low saturation switching applications up to 100 mA.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_CES
V_EBO
I_C
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage (I_B = 0)
Collector-Base Voltage (I_E = 0)
Collector-Emitter Voltage(V_BE = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
@ T_amb = 25°
Total Power Dissipation
@ T_case= 25°
@ T_case<100°
Junction Temperature
Storage Temperature range
Value
-12
-12
-12
-4
-200
0.36
1.2
1
-65 to +200
-65 to +200
Unit
V
V
V
V
mA
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_thJ-a
R_thJ-c
Ratings
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
486
146
Unit
°C/ W
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
I_CBO
I_CES
V_CEO (*)
V_CES
V_CBO
V_EBO
Collector Cutoff Current
Collector Cutoff Current
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Test Condition(s)
V_CB =-6 V, I_E =0V,
T_j =125°C
V_BE =0 V, V_CE =-6 V
I_C =-10 mA, I_B =0
V_BE =0 V, I_C =-10 µA
I_C =-10 µA, I_E =0
I_E =-100 µA, I_C =0
Min
-
-
-12
-12
-12
-4
Typ Mx
- -10
- -80
-
-
-
-
-
-
-
-
Unit
µA
nA
V
V
V
V
COMSET SEMICONDUCTORS
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