2N2646_12 Datasheet, PDF (1/2 Pages) Comset Semiconductor – SILICON UNIJUNCTION TRANSISTORS

2N2646 – 2N2647
SILICON UNIJUNCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
for triggering high power SCR’s.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
T_j=125°C unless otherwise noted
Symbol
Ratings
V_B2E
I_e
Emitter-Base2 Voltage
RMS Emitter Current
i_e
Peak Pulse Emitter Current *
V_B2B1
Interbase Voltage
P_D
RMS power Dissipation
T_J
Junction Temperature
T_Stg
Storage Temperature
Capacitor discharge – 10µF or less, 30volts or less.
2N2646 – 2N2647
30
50
2
35
300
-65 to +125
-65 to +150
Unit
V
mA
A
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
η
R_BBO
V_EB1(sat)
I_B2(MOD)
I_EO
V_(BR)B1E
I_V
Intrinsic stand-off ratio
V_B2B1 = 10V
Interbase Resistance , V_B2B1 = 3V
Emitter Saturation Voltage
V_B2B1 = 10V , I_E = 50 mA
Modulated Interbase Current
V_B2B1 = 10V , I_E = 50 mA
Emitter Revers Current
V_B2E = 30 V , I_B1 = 0
Base 1 Emitter breakdown Voltage
I_E =100 µA
Valley Current , V_B2B1 = 20 V
I_P
Peak Current , V_B2B1 = 25 V
2N2646
2N2647
2N2646
2N2647
2N2646
2N2647
Min.
0.56
0.68
4.7
-
-
-
30
4
8
-
-
Typ.
-
-
-
-
15
-
-
-
-
-
-
Max.
0.75
0.82
9.1
2.5
-
12
-
-
-
5
2
Unit
-
KΩ
V
V
µA
V
mA
µA
24/09/2012
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COMSET SEMICONDUCTORS