2N2646 Datasheet, PDF (1/3 Pages) Boca Semiconductor Corporation – Silicon PN Unijuction Transistor

2N2646
2N2647
SILICON UNIJUNCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation
voltage, peak-point current and valley current as zell as a much higher base-one peak
pulse voltage. In addition, these devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit
economy is of primary importance, and is ideal for use in firing circuits for Silicon
Controlled Rectifiers and other applications where a guaranteed minimum pulse
amplitude is required. The 2N2647 is intended for applications where a low emitter
leakage current and a low peak point emitter current (trigger current) are required and
also for triggering high power SCR’s.
ABSOLUTE MAXIMUM RATINGS
T_j=125°C unless otherwise noted
Symbol
Ratings
V_B2E
Emitter-Base2 Voltage
I_e
RMS Emitter Current
i_e
Peak Pulse Emitter Current *
V_B2B1
Interbase Voltage
P_D
RMS power Dissipation
T_J
Junction Temperature
T_Stg
Storage Temperature
Capacitor discharge – 10µF or less, 30volts or less.
2N2646
2N2647
30
50
2
35
300
-65 to +125
-65 to +150
Unit
V
mA
A
V
mW
°C
°C